Gallium nitride (GaN) is fast becoming a foundational technology in power electronics, offering higher power density and better efficiency than traditional silicon. By bringing faster switching speeds ...

The portfolio includes eight industrial (e.g. PMEG6010EXD), as well as eight AEC-Q101 qualified (e.g. PMEG4010EXD-Q) products. This release supports the growing trend for manufacturers to replace ...

Here’s a RoundUp of this week’s must-read articles – we’ll delve into the latest developments on ISCAD Technology, Power Measurement with Schottky Diode, and GaN Solutions! Here’s a RoundUp of this ...

Infineon Technologies AG has introduced what it claims is the world’s first gallium nitride (GaN) power transistor with an integrated Schottky diode. Designed for industrial use, the CoolGaN G5 ...

Rated at 4A, 6A, 8A, 10A, and 12A, the DSCxxA065LP series is housed in the ultra-thermally efficient T-DFN8080-4 package and is designed for high-efficiency power switching applications, such as DC to ...

The new SiC Schottky diodes from Diodes Incorporated deliver industry-leading FOM and system efficiency. Diodes Incorporated (Diodes) has announced an expansion of its silicon carbide (SiC) product ...

Vishay has launched 16 SiC Schottky diodes with 650-V and 1200-V ratings in SOT-227 packages, enhancing efficiency in high-frequency applications. The devices offer, according to the manufacturer, the ...

Vishay adds 16 new 650-V and 1,200-V SiC Schottky diodes in the SOT-227 package for high-frequency applications. Vishay Intertechnology, Inc. has introduced 16 new 650-V and 1,200-V silicon carbide ...

Engineers at Arizona State University are claiming to have delivered a significant breakthrough in the performance of AlN Schottky barrier diodes. “Our work is the first demonstration that ...

Infineon’s CoolSiC Schottky diode 2000 V G5 enables higher efficiency in industrial DC link systems up to 1500 VDC. Infineon Technologies AG has introduced the CoolSiC Schottky diode 2000 V G5, ...